| PART |
Description |
Maker |
| UTV120 |
UHF TV 470-860 MHz, Class A, Common Emitter; fO (MHz): 860; P(out) (W): 12; Gain (dB): 8.9; Vcc (V): 26.5; ICQ (A): 1.7; IMD Type (dB): -52; Case Style: 55JT-2 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
| CGY887B CGY887B_1 CGY887B-2015 |
860 MHz/ 27.8 dB gain push-pull amplifier
From old datasheet system
860 MHz, 27.8 dB gain push-pull amplifier
|
Quanzhou Jinmei Electronic ...
NXP Semiconductors
Philips Semiconductors
|
| BGD904 BGD904MI |
860 MHz, 20 dB gain power doubler amplifier
|
NXP Semiconductors
|
| BGD814 BGD81401 |
860 MHz, 20 dB gain power doubler amplifier
|
NXP Semiconductors
Philips
|
| MHW8242 |
24 dB GAIN 860 MHz 128-CHANNEL CATV AMPLIFIER
|
MOTOROLA[Motorola, Inc]
|
| BGX885N_5 BGX885N01 BGX885N-2015 BGX885N-15 BGX885 |
From old datasheet system
860 MHz, 17 dB gain push-pull amplifier
|
Philips
Quanzhou Jinmei Electro...
http://
|
| BGD885 BGD885_7 BGD88501 |
860 MHz, 17 dB gain power doubler amplifier
From old datasheet system
|
NXP Semiconductors
Philips
|
| MHW7222 MHW8222 |
22 dB GAIN 750/860 MHz 110/128 CHANNEL CATV AMPLIFIERS
|
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| BGD902MI BGD902 |
CATV amplifier modules 40 MHz - 900 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
860 MHz, 18.5 dB gain power doubler amplifier
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BGD802 |
860 MHz, 18.5 dB gain power doubler amplifier
From old datasheet system
CATV WIDEBAND AMPLIFIER,HYBRID,SOT-115J,PLASTIC
|
Philips Semiconductors
|
| PTF080601F PTF080601E PTF080601A PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦，860-960兆赫
LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
|
INFINEON[Infineon Technologies AG]
|
